Multistep junction termination extension for SiC power devices

Authors
Li, X Tone, K Fursin, L Zhao, JH Burke, T Alexandrov, P Pan, M Weiner, M
Citation
X. Li et al., Multistep junction termination extension for SiC power devices, ELECTR LETT, 37(6), 2001, pp. 392-393
Citations number
2
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
392 - 393
Database
ISI
SICI code
0013-5194(20010315)37:6<392:MJTEFS>2.0.ZU;2-8
Abstract
A multistep junction termination extension (MJTE) for SIC power devices, wh ich uses a single-step ion implantation and multiple dry etches, is studied by way of two-dimensional numerical simulations and confirmed by fabricati ng and measuring a high-voltage implanted 4H-SiC pin diode. It is shown tha t MJTE is a very effective approach and can be easily implemented in experi ment.