Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors

Authors
Huang, JJ Caruth, D Feng, M Lambert, DJH Shelton, BS Wong, MM Chowdhury, U Zhu, TG Kwon, HK Dupuis, RD
Citation
Jj. Huang et al., Room and low temperature study of common emitter current gain in AlGaN/GaNheterojunction bipolar transistors, ELECTR LETT, 37(6), 2001, pp. 393-395
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
393 - 395
Database
ISI
SICI code
0013-5194(20010315)37:6<393:RALTSO>2.0.ZU;2-S
Abstract
Increased collector current and common emitter (CE) current gain at lower t emperature in AlCaN/GaN heterojunction bipolar transistors is reported. For the same base current I-B = 15 muA and biased voltage V-CE = 50V. the coll ector current increases from I-C = 169 muA (beta = 11) at 295K to I-C = 411 muA (beta = 27) at 190K. This increase in the collector current and CE gai n at lower temperature can be attributed to the reduced base recombination current. which is due to the carrier traps associated with dislocation cent res in the base-emitter junction.