Sacrificial Si and SiO2 layers as surface preparation technique for SiC

Authors
Kestle, A Koh, A Wright, C Wilks, SP Mawby, PA Bowen, WR
Citation
A. Kestle et al., Sacrificial Si and SiO2 layers as surface preparation technique for SiC, ELECTR LETT, 37(6), 2001, pp. 395-396
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
37
Issue
6
Year of publication
2001
Pages
395 - 396
Database
ISI
SICI code
0013-5194(20010315)37:6<395:SSASLA>2.0.ZU;2-Y
Abstract
The use of sacrificial layers of Si and SiO2 as a surface preparation metho d for SiC is reported. The chemical nature and morphology of the surfaces w ere assessed using X-ray photoelectron spectroscopy and atomic Tol Ct, micr oscopy. respectively. Results show flat well-ordered surfaces far superior to those achieved by conventional cleanroom processing techniques.