A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOICMOS dynamic-threshold (DTMOS) techniques

Authors
Liu, SC Wu, FA Kuo, JB
Citation
Sc. Liu et al., A novel low-voltage content-addressable-memory (CAM) cell with a fast tag-compare capability using partially depleted (PD) SOICMOS dynamic-threshold (DTMOS) techniques, IEEE J SOLI, 36(4), 2001, pp. 712-716
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE JOURNAL OF SOLID-STATE CIRCUITS
ISSN journal
00189200 → ACNP
Volume
36
Issue
4
Year of publication
2001
Pages
712 - 716
Database
ISI
SICI code
0018-9200(200104)36:4<712:ANLC(C>2.0.ZU;2-E
Abstract
This paper reports a novel low-voltage content-addressable-memory (CAM) cel l with a fast tag-compare capability using partially depleted (PD) SOI CMOS dynamic-threshold (DTMOS) techniques, With two auxiliary pass transistors to dynamically control the bodies of transistors in the tag-compare portion of CAM cell, this SOI CAM cell has a fast tag-compare capability at a low supply voltage of 0.7 V as verified by the results from the two-dimensional semiconductor device simulation program MEDICI.