Magnetization reversal processes in exchange-biased spin-valve structures

Citation
Am. Goodman et al., Magnetization reversal processes in exchange-biased spin-valve structures, IEEE MAGNET, 37(1), 2001, pp. 565-570
Citations number
29
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
37
Issue
1
Year of publication
2001
Part
2
Pages
565 - 570
Database
ISI
SICI code
0018-9464(200101)37:1<565:MRPIES>2.0.ZU;2-O
Abstract
In this paper we provide an initial, qualitative description of the basic m agnetization reversal processes that occur when a soft ferromagnetic layer is coupled to an antiferromagnet. We find that the magnetization reversal i n the ferromagnetic layer adjacent to the antiferromagnet, i.e., the pinned layer, is dominated by thermal activation processes, We have developed, an d report here, a model that accounts for seven distinct features of the mag netization curve of the pinned layer. The model is based upon the formation of domains in the antiferromagnetic layer whose growth is dominated by the rmal activation processes. The thermal activation of these domain processes can result in shifts of the hysteresis loop in either direction, depending on the magnetic history of the sample and the rate of field sweep. In cons equence, we call into question the current definition of the exchange field H-ex typically used to characterize such systems.