A moving boundary diffusion model for PIN diodes

A large number of diode models exist that simulate the reverse recovery pro cess. Many models assume an abrupt change of current during reverse recover y. Some models were verified by calculating the diode's response after the application of a step forcing voltage, Only a few models described in the l iterature compare simulation results with experimental data. The abrupt cha nge in current calculated by most diode models will ensure large di/dt, whi ch in turn will result in the calculation of an excessive voltage spike, Th e diode model described in this paper is aimed at the application of high p ower rectification where the exciting voltage is more likely to be sinusoid al rather than a step change. The formulation is particularly useful in mod eling very high power systems such as electromagnetic launch systems where calculation speed and accuracy of results are held at a premium. The model is formulated based on a p+in+ type diode. In addition, by considering the fact that the width of the intrinsic hulk region reduces significantly duri ng the reverse biased condition, the model will more accurately calculate r everse recovery current and voltage. Finally, the model is verified by comp aring simulation results to experimental data.