Magnetic ground state of a thin-film element

Authors
Citation
W. Rave et A. Hubert, Magnetic ground state of a thin-film element, IEEE MAGNET, 36(6), 2000, pp. 3886-3899
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE TRANSACTIONS ON MAGNETICS
ISSN journal
00189464 → ACNP
Volume
36
Issue
6
Year of publication
2000
Pages
3886 - 3899
Database
ISI
SICI code
0018-9464(200011)36:6<3886:MGSOAT>2.0.ZU;2-K
Abstract
By means of three-dimensional numerical calculations we studied possible mi cromagnetic configurations in a rectangular Permalloy-like thin-film elemen t. The parameters were chosen to be compatible with the so-called micromagn etic standard problem 1. We demonstrate that for these parameters a diamond domain pattern is the lowest energy state that replaces cross-tie patterns favorable in larger elements. Only at smaller sizes does the originally en visaged Landau pattern form the ground state. The transition to high-remane nce structures (or what would be comparable to a ''single-domain" state) is found for lateral sizes that are an order of magnitude smaller than the be nchmark parameters. The transitions among the different domain patterns bec ome plausible in view of the energy of symmetric Neel walls in extended thi n films. The features of the high-remanence structures cars be derived from the principle of uniform charge distribution.