Structural study of InGaAs/GaAs quantum dots grown by metalorganic chemical vapor deposition for optoelectronic applications at 1.3 mu m

We have studied the influence of difference growth conditions on the two-di mensional to three-dimensional growth mode transition for a specific class of InGaAs/GaAs quantum dots (QDs) optimized for applications to optical dev ices operating around 1.3 mum (In content x approximate to0.5). The dots ar e grown by low-pressure metalorganic chemical vapor deposition on GaAs subs trates. We demonstrate that the critical layer thickness corresponding to o ptimized single-QD layer structures (i.e., with reduced wetting layer thick ness and high uniformity) can be controlled by kinetic effects. The optimiz ed growth conditions allow us to grow six-layers stacked QD structures as a ctive material for the fabrication of a light emitting devices operating ar ound 1.3 mum at room temperature. (C) 2001 American Institute of Physics.