Elastic properties of nanocrystalline zirconium-silicon-boron thin films

Citation
M. Chirita et al., Elastic properties of nanocrystalline zirconium-silicon-boron thin films, J APPL PHYS, 89(8), 2001, pp. 4349-4353
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
8
Year of publication
2001
Pages
4349 - 4353
Database
ISI
SICI code
0021-8979(20010415)89:8<4349:EPONZT>2.0.ZU;2-D
Abstract
Thin amorphous films of ZrB3 grown on Si(111) substrates by chemical-vapor deposition are, upon annealing at 960 degreesC, transformed to films compos ed of nanocrystallites (6-10 nm extent) with a nominal composition of Zr0.9 Si0.3B3. The independent elastic constants of the layers are determined fro m the dispersion of the surface and pseudo-Sezawa acoustic excitations and reveal large enhancements in the C-11 and C-44 constants accompanying the c onversion of ZrB3 to the nanocrystalline phase. Since the transverse sound velocities of the binary and Zr0.9Si0.3B3 are in near resonance with the so und velocity of Si (V-T(Si)=4.8 km/s), only the Rayleigh surface wave is lo calized to the film while all higher-order acoustic modes are evanescent. D espite the strong decay channels, high-lying excitations with velocities as large as 25 km/s (>V-T(Si)) are observed in Brillouin light scattering. In sight into these acoustic properties is provided by evaluating the elastody namic Green's functions and associated acoustic-mode densities. (C) 2001 Am erican Institute of Physics.