Characterization of deep levels in InGaP grown by compound-source molecular beam epitaxy

Deep levels in Si-doped In0.49Ga0.51P grown by compound-source molecular be am epitaxy (MBE) have been investigated by deep level transient spectroscop y. In0.49Ga0.51P samples were grown by compound-source MBE with V/III ratio s of 4, 10, and 17. Depending upon the V/III ratio three major deep levels with activation energies of 0.26 +/-0.02, 0.36 +/-0.02, and 0.82 +/-0.05 eV were observed. The effect of thermal annealing on the behavior of deep lev els was also investigated. The deep levels in InGaP grown by compound-sourc e MBE showed behavior of phosphorus antisites and related complexes unlike those found in solid-source MBE-grown InGaP that showed behavior of phospho rus vacancies and related complexes. Si-doped InGaP layers grown with a V/I II ratio of 4 showed trap concentration and capture cross section as low as 1.38x10(14) cm(-3) and 2.9x10(-16) cm(2), respectively. The results indica te the potential of InGaP grown by compound-source MBE for use in improved low-frequency noise applications. (C) 2001 American Institute of Physics.