Diffusion photovoltage in poly(p-phenylenevinylene)

Citation
V. Duzhko et al., Diffusion photovoltage in poly(p-phenylenevinylene), J APPL PHYS, 89(8), 2001, pp. 4410-4412
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
8
Year of publication
2001
Pages
4410 - 4412
Database
ISI
SICI code
0021-8979(20010415)89:8<4410:DPIP>2.0.ZU;2-5
Abstract
Photovoltage phenomena in poly(p-phenylenevinylene) (PPV) are investigated under pulsed laser illumination. The photovoltage transients are strongly r etarded in time depending on sample thickness, laser intensity, and bias il lumination. It is shown that the photovoltage in PPV originates from separa tion of excess electrons and holes due to their concentration gradient and different diffusion coefficients (diffusion photovoltage). The diffusion co efficient of excess holes is found to be on the order of 1x10(-6) cm(2)/s a nd it increases with increasing excitation intensity and intensity of bias illumination. The diffusion coefficient of excess electrons is about 1-2 or ders of magnitude smaller than for excess holes. (C) 2001 American Institut e of Physics.