We report on the dielectric properties of Cd1-x-yZnxMnyTe alloys studied by
capacitance and dissipation factor measurements at temperature 5 K <T < 47
5 K and frequency 20 Hz <f <1 MHz. A Debye-like relaxation of dielectric be
havior has been observed, which is found to be a thermally activated proces
s. The activation energies obtained from the capacitance and dissipation fa
ctor measurements are in excellent agreement. By means of our measurements,
it is believed that the dielectric character of the carrier hopping among
structural defects is responsible for the observed Debye relaxation. The re
lationship between the activation energy and Zn concentration has been esta
blished. The results are described by the four-center model, in which the n
umber of Zn atoms appearing in the nearest-neighbor sites of a defect can h
ave four possible configurations. (C) 2001 American Institute of Physics.