Passivation of an anodic oxide/p-Si interface stimulated by electron injection

Authors
Dittrich, T Burke, T Koch, F Rappich, J
Citation
T. Dittrich et al., Passivation of an anodic oxide/p-Si interface stimulated by electron injection, J APPL PHYS, 89(8), 2001, pp. 4636-4642
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
89
Issue
8
Year of publication
2001
Pages
4636 - 4642
Database
ISI
SICI code
0021-8979(20010415)89:8<4636:POAAOI>2.0.ZU;2-V
Abstract
The positive oxide charge (Q(ox)) and the concentration of nonradiative rec ombination defects (N-it) at a thin anodic oxide/p-Si interface are probed in situ by pulsed photovoltage and photoluminescence techniques during elec tron injection. Q(ox) and N-it decreased strongly due to electron injection . The observed effect is suggested to be inverse to the negative-bias-tempe rature instability. Defect reactions at the anodic oxide/p-Si interface are discussed. (C) 2001 American Institute of Physics.