TOC removal of raw industrial wastewater from LSI photo-resist processing with H2O2/UV in a batch reactor

Citation
Wj. Hou et al., TOC removal of raw industrial wastewater from LSI photo-resist processing with H2O2/UV in a batch reactor, J CHEM EN J, 34(3), 2001, pp. 444-447
Citations number
9
Categorie Soggetti
Chemical Engineering
Journal title
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN
ISSN journal
00219592 → ACNP
Volume
34
Issue
3
Year of publication
2001
Pages
444 - 447
Database
ISI
SICI code
0021-9592(200103)34:3<444:TRORIW>2.0.ZU;2-R
Abstract
The raw industrial wastewater from LSI photo-resist processing which contai ns 1,2-naphthoquinone-2-diazido-5-sulfonic acid sodium salt as a main compo nent with high NaCl concentration (>20 kg/m(3)), is very difficult to treat , The establishment of an appropriate treatment, which is friendly to the e arth's environment for raw industrial wastewater is an urgent matter to be solved. Total organic carbon (TOC) removal of the raw industrial wastewater , which contains TOC at 8000 g-TOC/m(3), by using hydrogen peroxide and ult raviolet irradiation (H2O2/UV), has been carried out. Experiments were carr ied out in a batch reactor with a low pressure UV lamp (500 W) irradiating ultraviolet at 254 nm and at 185 nm (5 %), The chemical compounds included in the raw industrial wastewater have been removed completely in the presen ce of initial concentration of hydrogen peroxide of two times the stoichiom etric ratio.