Electronic structure of self-assembled organic/inorganic semiconductor interfaces: lead phthalocyanine on InSb and InAs(100)-4X2/c(8 X2)

Citation
L. Giovanelli et al., Electronic structure of self-assembled organic/inorganic semiconductor interfaces: lead phthalocyanine on InSb and InAs(100)-4X2/c(8 X2), J ELEC SPEC, 114, 2001, pp. 375-381
Citations number
29
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
114
Year of publication
2001
Pages
375 - 381
Database
ISI
SICI code
0368-2048(200103)114:<375:ESOSOS>2.0.ZU;2-W
Abstract
The interfacial properties of ultra thin films of lead-phthalocyanine depos ited in situ onto InSb and InAs(100)-4X2/c(8X2) clean surfaces have been st udied by synchrotron radiation core level and valence band photoelectron sp ectroscopy. The interaction between the overlayers and the substrates was d etermined upon analyzing the changes in the photoemission spectra between r oom and higher annealing temperatures, leading to ordered monolayer films. While weaker than on other substrates, a reactivity is nevertheless present : the organic macrocycle preserves its integrity up to 320 degreesC but the Pb central atom first leaves the molecules most probably to be incorporate d in the substrate surface, before being desorbed at higher temperatures. ( C) 2001 Elsevier Science B.V. All rights reserved.