A high temperature X-ray absorption and valence band spectroscopy study ofthe Si(100) surface

Authors
Dhanak, VR Santoni, A Grill, L Petaccia, L
Citation
Vr. Dhanak et al., A high temperature X-ray absorption and valence band spectroscopy study ofthe Si(100) surface, J ELEC SPEC, 114, 2001, pp. 471-475
Citations number
25
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
114
Year of publication
2001
Pages
471 - 475
Database
ISI
SICI code
0368-2048(200103)114:<471:AHTXAA>2.0.ZU;2-9
Abstract
The Si(100) surface has been investigated in the temperature range 300-1660 K using valence band (VB) photoemission spectroscopy and X-ray absorption spectroscopy at the Si 2p edge. The VB photoemission results show that the high temperature surface has a metallic character and that above 1600 K, an appreciable increase in the metallicity indicates the presence of a phase transition. These results are supported by the X-ray absorption data. (C) 2 001 Elsevier Science B;V. All rights reserved.