Bulk-sensitive high-resolution ce 3d-4f resonance photoemission study of CeNiSn and CePdSn

High-resolution Ce 3d-4f resonance photoemission (RPES) spectra highly refl ecting bulk 4f states have been measured for a Kondo semiconductor CeNiSn a nd its reference material CePdSn. An intensity of f(0) final states is mark edly weaker for CeNiSn than far CePdSn. We also report on photon-energy dep endence of the RPES spectra. Comparison between the RPES spectra of CeNiSn and La 3d-4f RPES spectra of LaNiSn shows that the rare-earth 5d enhancemen t is significantly weaker than Ce 4f resonance enhancement. The high-resolu tion 3d-4f RPES spectra clarify the difference of the bulk electronic state s near the Fermi level between CeNiSn and CePdSn. (C) 2001 Elsevier Science B.V. All rights reserved.