Electronic structure and UPS of the misfit chalcogenide (SnS)NbS2 and related compounds

Citation
Ee. Krasovskii et al., Electronic structure and UPS of the misfit chalcogenide (SnS)NbS2 and related compounds, J ELEC SPEC, 114, 2001, pp. 1133-1138
Citations number
11
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
ISSN journal
03682048 → ACNP
Volume
114
Year of publication
2001
Pages
1133 - 1138
Database
ISI
SICI code
0368-2048(200103)114:<1133:ESAUOT>2.0.ZU;2-X
Abstract
Based on the self-consistent band structure we present density-of-states (D OS) functions for a supercell structure (SnS)(1.2)NbS2 and discuss the inte rcalation effects. An ab initio UPS spectrum of (SnS)NbS2 is compared to th e experiment. The prototypes of the layer constituents of the misfit, PbS ( NaCl) and 2H-NbS2 and NbSe2, are studied; theoretical results are compared with available XPS and optical measurements. For PbS both relativistic effe cts and local field effects are found important. Experimental angle resolve d UPS for NbSe2 are compared to k(parallel to)-projected DOS functions. (C) 2001 Elsevier Science B.V. All rights reserved.