Zn1-xMgxO is an important material for optoelectronic devices. We synthesiz
ed this material using a solution-based route. We investigated in detail th
e structural behavior of this material system using x-ray diffraction and R
aman spectroscopy, Mg substitution up to x approximate to 0.10 does not cha
nge the crystal structure, as revealed by x-ray diffraction and Raman spect
roscopic studies. This synthesis route is also suitable to prepare thin fil
ms by spin coating with the possibility of p and n doping.