This paper presents a complete threshold acceleration detection microsystem
comprising an array of threshold accelerometers and a low power interface
circuit. The sensors were designed and fabricated using the bulk-silicon di
ssolved-wafer process. The process offers a wide latitude in sensor thresho
ld levels, as demonstrated in the fabrication of devices with levels of 1.5
-1000 g, bandwidths of 45 Hz to 30 kHz, with mass sizes ranging from 0.015
mug to 0.7 mug, and low-resistance gold-gold contacts for the switch. The i
nterface circuit dissipates less than 300 muW, measures 2.2 mm x 2.2 mml it
was fabricated in-house using a standard 3 mum, p-well CMOS (complementary
metal oxide semiconductor) process, and is connected to the sensor chip in
a multi-chip module. The key aspects of the microsystem are the implementa
tion of sensor redundancy and supporting circuit logic to improve detection
accuracy and fault tolerance, which are crucial factors in many applicatio
ns. In addition, the microsystem supports communication with a standard mic
rocontroller bus in a smart sensor network.