Effects of the substrate temperature on the growth and properties of hydrogenated nanostructured silicon thin films

Nanostructured silicon thin films were deposited by a pulsed plasma enhance d chemical vapour deposition process using an argon-silane mixture. For eac h deposition temperature (T-S), the plasma modulation was chosen in such a way that the discharge was switched off just before the onset of powder for mation. The optical and electrical properties of the films were investigate d as a function of T-S and compared to those of films deposited under the s ame plasma conditions but with a continuous wave (CW) plasma. While the CW films show a gradual improvement in their properties with increasing T-S, a drastic change appears in the optical and electrical properties of hydroge nated nanostructured silicon (ns-Si:H) films for T-S > 50 degreesC. In part icular, for a deposition temperature of 150 degreesC a more compact materia l with a small surface roughness and a high conductivity was obtained. This improvement is correlated to the discharge conditions and particularly to the small size of the clusters embedded in the deposited film.