Shape optimization for a simulation of a semiconductor problem

This work gives a study of the Regier's model by using the shape optimizati on techniques. Two formulations of this model are proposed with appropriate boundary conditions of the MESFET transistor. In each formulation the exis tence of a free boundary, separating the depletion and neutrality of charge regions, is proved with some hypothesis. The shape gradient is calculated for each formulation to approach the solution. To approximate the free boun dary, two algorithms are presented. Numerical results obtained by implement ing the last algorithm prove that this shape optimization techniques provid e a reasonably smooth free boundary. (C) 2001 IMACS. Published by Elsevier Science B.V. All rights reserved.