EPR and UV-Raman study of BPSG thin films: structure and defects

Citation
M. Fanciulli et al., EPR and UV-Raman study of BPSG thin films: structure and defects, MICROEL ENG, 55(1-4), 2001, pp. 65-71
Citations number
11
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
01679317 → ACNP
Volume
55
Issue
1-4
Year of publication
2001
Pages
65 - 71
Database
ISI
SICI code
0167-9317(200103)55:1-4<65:EAUSOB>2.0.ZU;2-B
Abstract
Borophosphosilicate glass (BPSG) films produced by Sub-Atmospheric Pressure Chemical Vapor Deposition (SACVD) with different B and P concentrations ha ve been investigated by ultra-violet (UV) Raman and electron paramagnetic r esonance (EPR) spectroscopies. We observe a correlation between the main fe ature of the UV-Raman spectra in the as deposited films, the line at 1326(2 ) cm(-1) attributed to the stretching vibrations of the P=O double bond, an d the spin resonance signals attributed to the stable phosphorus-oxygen-hol e-center (POHC) created after room temperature X-ray irradiation. The inten sity of the P=O line as well as the intensity of the POHC EPR signal depend on the B content. The metastable configuration, POHCm, has been also obser ved by EPR. The B content does not affect significantly the concentration o f this paramagnetic defect. (C) 2001 Elsevier Science B.V. All rights reser ved.