Interface characteristics between tungsten silicide electrodes and thin dielectrics

In today's ULSI technology there is an increasing demand in metal electrode s for storage capacitors and transistors. In this publication we present an investigation of MOS capacitor structures with CVD tungsten silicide (WSix ) as metal electrode in conjunction with silicon dioxide (SiO2) and oxidize d nitride (NO). Bulk silicon and poly silicon were used as second electrode , respectively. Tungsten silicide has been used both as gate electrode and as bottom electrode. For both cases thermal stability up to 780 degreesC wi th low leakage current has been shown. Band discontinuities between SiO2 an d WSix were estimated from current-voltage measurements. (C) 2001 Elsevier Science B.V. All rights reserved.