Electrical behaviour and microstructural analysis of metal Schottky contacts on 4H-SiC

Schottky contacts are investigated on n-type 4H-SiC by electrical measureme nts and microstructural analyses to understand the behaviour of such a barr ier. Titanium and tungsten were deposited after RCA cleaning as surface pre paration of SiC. Electrical characterisation shows that the Fermi level is partially pinned by interfacial surface states attributed to an interfacial layer between the metal and the SiC. This interfacial layer is characteris ed by X-ray reflectivity, transmission electron microscopy and Auger electr on spectroscopy. An attempt is made to correlate microstructural observatio ns with electrical measurements. (C) 2001 Elsevier Science B.V. All rights reserved.