Structural characterisation of titanium silicon carbide reaction

Interfacial reaction and phase formation as a function of annealing tempera ture (900, 950 and 1000 degreesC) and times were investigated on titanium t hin films evaporated on n-type 6H-SiC (0001) substrate. The study was carri ed out employing a combination of Rutherford backscattering spectrometry, X -ray diffraction and sheet resistance measurements. At 900 degreesC a doubl e layer of TiC and Ti5Si3 phases was formed and it was found to be stable u p to 7 h of annealing. The ternary phase Ti3SiC2 appeared at 950 degreesC w ith a small fraction, after an annealing for 45 min. At 1000 degreesC there is a strong presence of this phase in conjunction with the Ti5Si3 phase. ( C) 2001 Elsevier Science B.V. All rights reserved.