The use of ramp-type junctions is not only limited to the fabrication of Jo
sephson junctions for ultrafast high-temperature superconducting electronic
s but is also well suited for the controlled coupling of crystallographical
ly compatible oxide materials such as ferromagnetic manganites and supercon
ducting cuprates, Transport processes of ramp-type junctions strongly depen
d on the ramp interface generated in the fabrication process. With regard t
o the high potential of ramp-type junctions in the study and application of
oxide materials, a detailed investigation of the process of ramp formation
by modern surface analytical methods is highly desired. The enormous chall
enge in the fabrication of ramp-type junctions consists in the necessity of
the engineering of the involved interfaces on a unit-cell length scale. We
present a detailed study of the ramp formation by ion beam techniques. Spe
cial focus is put on the prevention of recrystallization of ion milled mate
rial which poses a major problem to the formation of atomically smooth ramp
interfaces with desired stoichiometry. (C) 2001 Elsevier Science B.V. All
rights reserved.