Progress in growth and physics of nitride-based quantum dots

Our recent progress in growth and optical properties of GaN-based quantum d ot (QD) structures is reviewed. After discussing the impact of GaN-based QD s on threshold current characteristics. we have shown InGaN self-assembled QDs on a GaN epitaxial layer with average diameter as small as 8.4 nm and s trong photoluminescence emission from the QDs at room temperature. Furtherm ore, light emission from individual QDs with sharp luminescence line was de tected by single dot spectroscopy, Using these growth results, we fabricate d a laser structure with InGaN QDs embedded in the active layer. A clear th reshold was observed in the dependence of the emission intensity on the exc itation energy at room temperature under optical excitation. Finally. growt h of InGaN QDs grown by selective: growth is also demonstrated.