Piezoelectric effects on the electron-hole dipole in In0.5Ga0.5As/GaAs self-assembled quantum dots

Citation
A. Levin et al., Piezoelectric effects on the electron-hole dipole in In0.5Ga0.5As/GaAs self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 37-40
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
1
Year of publication
2001
Pages
37 - 40
Database
ISI
SICI code
0370-1972(200103)224:1<37:PEOTED>2.0.ZU;2-M
Abstract
Photocurrent spectroscopy is used to investigate the quantum-confined Stark shift, QCSS, of In0.5Ga0.5As/GaAs self-assembled quantum dots (QDs) grown on (100) and (311)B planes. An asymmetric dependence of the QCSS with respe ct to the direction of the electric field is observed in both cases, We sho w that the (100) dots have an almost zero permanent electron-hole dipole mo ment. This result indicates that the recently reported "inverted electron-h ole alignment" [Phys. Rev. Lett. 84, 733 (2000)] is not a general property of QDs. By comparing the QCSS for the (100) and (311)B dots, we propose tha t in the dots grown on the high index plane, the electron and hole wavefunc tions are displaced by a strain-induced piezoelectric field.