We present a study of carrier redistribution in InxGa1-xAs/GaAs self-assemb
led quantum dots (QDs) by comparing electroluminescence (EL) and photocurre
nt (PC) spectra. We show the: existence of a red-shift of the dot emission
in EL relative to the dot absorption in PC, referred to as the Stokes shift
(SS). The existence of the SS is explained in terms of a thermal redistrib
ution of carriers between dots. According to the thermalization model, the
SS increases with the linewidth of the QD absorption spectrum. We show that
for a large variety of quantum dots, differing in the material system and/
or the growth technique, the SS has a universal dependence on the QD absorp
tion linewidth.