Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots

Authors
Gucciardi, PG Vinattieri, A Colocci, M Damilano, B Grandjean, N Semond, F Massies, J
Citation
Pg. Gucciardi et al., Near-field optical spectroscopy of multiple stacked planes of GaN/AlN quantum dots, PHYS ST S-B, 224(1), 2001, pp. 53-56
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
1
Year of publication
2001
Pages
53 - 56
Database
ISI
SICI code
0370-1972(200103)224:1<53:NOSOMS>2.0.ZU;2-O
Abstract
We have investigated the photoluminescence properties of GaN quantum dots w ith sub-micron lateral resolution by means of Near-Field Scanning Optical M icroscopy (SNOM) operating in illumination mode. The analyzed sample consis ts of several stacked planes of GaN/AlN quantum dots grown by molecular bea m epitaxy on Si(111) substrate. A clear correlation between the surface top ography measured by Atomic Force Microscopy on uncapped samples and the SNO M luminescence maps has been found.