Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well

Authors
Guffarth, F Heitz, R Schliwa, A Stier, O Kovsh, AR Ustinov, V Ledentsov, NN Bimberg, D
Citation
F. Guffarth et al., Electronic properties of InAs/GaAs quantum dots covered by an InxGa1-xAs quantum well, PHYS ST S-B, 224(1), 2001, pp. 61-65
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
1
Year of publication
2001
Pages
61 - 65
Database
ISI
SICI code
0370-1972(200103)224:1<61:EPOIQD>2.0.ZU;2-I
Abstract
The electronic properties of self-organized InAs quantum dots (QDs) covered by an InxGa1-xAs quantum well (QW) are investigated experimentally and the oretically. Photoluminescence (PL), photoluminescence excitation (PLE) expe riments, and numerical calculations for a series of samples with different indium concentration in the QW provide insights into the interrelated effec ts of decomposition-induced structural changes of the InAs QDs and the comp osition-induced changes of the confinement potential. The results give guid ance to optimize the electronic properties for 1.3 mum laser operation.