Fluorescence intermittency in InP self-assembled quantum dots

We report the fluorescence intermittency in self-assembled InP quantum dots studied by means of far field single dot spectroscopy. We found that the b linking efficiently occurs when the confined excitons are filled up to a ce rtain level. Since blinking dots are observed in the vicinity of scratches, we attributed the origin of the fluorescence intermittency to a local elec tric field due to a carrier trapped at a deep localized center near the int erface between the dot and matrix. The validity of this model is supported by a thermal activation type behavior of the switching rate and the micro-p hotoluminescence study in an external electric field.