Capacitance-voltage spectroscopy of self-organized InAs/GaAs quantum dots embedded in a pn diode

We investigate the energy levels and their inhomogeneous broadening of self -organized quantum dots (QDs) embedded in a pn diode by means of capacitanc e-voltage (C-li) profiling. Our simulations of the C-V characteristics are based on the self-consistent solution of the Poisson equation and the drift -diffusion equations. Good quantitative agreement between predictions of th e model and the low-frequency C-V characteristics is obtained for different temperatures. The comparison with experimental C-V data allows us to deter mine the energy levels of single QD states and their broadening.