Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots

Authors
Sanguinetti, S Gurioli, M Grilli, E Guzzi, M Henini, M
Citation
S. Sanguinetti et al., Piezoelectric effects on optical properties and carrier kinetics of InAs/GaAs(N11) self-assembled quantum dots, PHYS ST S-B, 224(1), 2001, pp. 111-114
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
224
Issue
1
Year of publication
2001
Pages
111 - 114
Database
ISI
SICI code
0370-1972(200103)224:1<111:PEOOPA>2.0.ZU;2-F
Abstract
The effects of a piezoelectric field on the optical properties and carrier kinetics of strained InAs/GaAs sell-assembled quantum dot heterastructures grown on (N11) substrates with A or B termination are presented. The piezoe lectric-induced quantum-confined Stark shift in (N11) quantum dots grows wi th 1/N and shows an asymmetric dependence on whether the substrate has A or B termination. Time-dependent optical nonlinearity, induced in QDs when th e piezoelectric field is screened by photogenerated carriers, is investigat ed by means of time-resolved photoluminescence.