Near 1.3 mu m emission at room temperature from InAsSb/GaAs self-assembledquantum dots on GaAs substrates

We observed for the first time clear emission near 1.3 mum at room temperat ure from InAs0.9Sb0.1 self-assembled quantum dots on GaAs substrates. InAs0 .9Sb0.1 quantum dots were grown by mulecular beam epitaxy using Stranski-Kr astanov growth mode, for application to emission at 1.3 mum lasers. The res ults showed that the average diameter of quantum dots observed by atomic fo rce microscopy is similar to 20 nm. Emission at 1.28 mum with full width at half-maximum of 52 meV was observed from InAs0.9Sb0.1 quantum dots in an I n0.15Ga0.85As matrix on GaAs substrate. This structure should be very usefu l for applying quantum dot lasers to optical communication systems for 1.3 mum.