Strain seeding of Ge quantum dots grown on Si (001)

In this paper, we report the use of buried dot layers as templates, which s eed the dot formation in subsequent layers. We demonstrate that these burie d layers can be used to cause premature dot formation in subsequent Ge grow th, by straining the Si growth surface, without introducing any sample dama ge or impurities. Tn this way we are able to show a reduction in the line w idth of the PL spectra and control over the recombination energy.