In this paper we present a study of the structure, composition and optical
properties of SiGe quantum dots, grown by gas-source molecular beam epitaxy
on Si (001). Atomic force microscopy (AFM), transmission electron microsco
py (TEM). scanning transmission electron microscopy (STEM), energy dispersi
ve X-ray analysis (EDX), photoluminescence (PL) spectroscopy and dr cay lim
e measurements of the quantum dots suggest that there are two distinct size
s of quantum dot, contributing two distinct emission bands in the PL spectr
a.