Electronic stopping calculated using explicit phase shift factors - art. no. 134113

Predicting range profiles of low-energy (0.1-10 keV/amu) ions implanted in materials is a long-standing problem of considerable theoretical and practi cal interest. We combine here the best available method for treating the nu clear slowing down, namely a molecular-dynamics range calculation method, w ith a method based on density-functional theory to calculate electronic slo wing down for each ion-target atom pair separately. Calculation of range pr ofiles of technologically important dopants in Si shows that the method is of comparable accuracy to previous methods for B, P, and As implantation of Si, and clearly more accurate for Al implantation of Si.