Effects of hydrostatic pressure on Raman scattering in Ge quantum dots - art. no. 121306

Raman scattering under hydrostatic pressure is used to investigate the phon on modes of self-organized Ge quantum dots (QD's) grown by solid source mol ecular-beam epitaxy. The pressure dependence of Ge-Ge phonon and Si acousti cal-overtone (2TA) modes are studied from 0 to 67 kbar at room temperature. Our results show that the overlapping spectra of the Ge-Ge phonon and Si 2 TA modes occur around 303 cm(-1) at ambient pressure which can be resolved at relatively low pressure of about 3 kbar. The linear pressure coefficient of Ge-Ge phonon mode in QD's is found to be 0.29 cm(-1)/kbar, which is sli ghtly smaller than the corresponding quantity in bulk Ge.