Asymmetry of electron and hole doping in YMnO3 - art. no. 125127

Citation
Bb. Van Aken et al., Asymmetry of electron and hole doping in YMnO3 - art. no. 125127, PHYS REV B, 6312(12), 2001, pp. 5127
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6312
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010315)6312:12<5127:AOEAHD>2.0.ZU;2-4
Abstract
We synthesized hexagonal YMnO3 doped with tetravalent Zr ions and studied t he electronic and magnetic properties. Zr substitution creates a mixed Mn3-Mn2+ system, instead of the conventional Mn3+-Mn4+ of colossal magnetoresi stance manganites. The YMnO3 system displays a pronounced asymmetry for ele ctron and hole doping. Hole doping results in a conducting state, whereas e lectron doping retains the insulating state. This asymmetry is a consequenc e of the crystal field splitting of the Mn ions in trigonal bipyramidal coo rdination.