Raman electron paramagnetic resonance in Zn1-xCoxTe and Cd1-xCoxTe - art. no. 125208

Citation
Mj. Seong et al., Raman electron paramagnetic resonance in Zn1-xCoxTe and Cd1-xCoxTe - art. no. 125208, PHYS REV B, 6312(12), 2001, pp. 5208
Citations number
25
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
01631829 → ACNP
Volume
6312
Issue
12
Year of publication
2001
Database
ISI
SICI code
0163-1829(20010315)6312:12<5208:REPRIZ>2.0.ZU;2-3
Abstract
Electronic Raman transitions due to the spin Rip of the 3d electrons of Co2 + in Zn1-xCoxTe and Cd1-xCoxTe (x less than or equal to0.01) are observed a t h omega (PM)=g(Co2+)mu H-B with g(Co2+)=2.295 +/-0.010 and 2.310 +/-0.002 , respectively. The intensity of Raman electron paramagnetic resonance (Ram an-EPR) shows strong resonant enhancement when the incident or scattered ph oton energy coincides with that of a Zeeman component of the free exciton. Under resonant conditions, the Raman spectra display ''ZnTe-like" (or ''CdT e-like'') and "CoTe-like" longitudinal optical (LO) phonons in combination with the spin-flip transitions, a consequence of the Frohlich interaction. In Zn1-xCoxTe, even the ZnTe-like TO phonon exhibited EPR sidebands but med iated by the deformation potential; the large p-d spin-spin exchange intera ction in Co2+-based II-VI diluted magnetic semiconductors is the underlying microscopic mechanism.