Core-level photoelectron spectroscopy from individual heteroepitaxial nanocrystals on GaAs(001) - art. no. 125335

Con-level spectra of individual heteroepitaxial nanocrystals were measured with a spectroscopic photoemission and low-energy electron microscope that allows laterally resolved photoemission spectroscopy. The nanocrystals were obtained by depositing nominally 2 monolayers (ML) of InAs on a Se-tennina ted GaAs(001) surface. The Se-termination of GaAs results in the formation of a 2-3-ML-thick film of Ga2Se3 on top of bulk GaAs. During heteroepitaxy the InAs reacts with the Ga,Se,: A phase separation takes place on the anio n sublattice, while an alloying takes place on the cation sublattice. Durin g the initial stages of growth, a submonolayer-thick wetting layer of In(x) Ga(1-x)A(s) is formed that is covered by (InyGa1-y)(2)Se-3. (InyGa1-y)(2)Se -3-covered InAs nanocrystals are formed on this surface.