A general kinetic model based on accurate density-functional-theoretic tota
l-energy calculations is introduced to describe the aggregation kinetics of
oxygen-related thermal double donors (TDD's) in silicon. The calculated ki
netics, which incorporates the reactions of associations, dissociations, an
d isomerizations of all relevant oxygen complexes, is in agreement with exp
erimental annealing studies. The aggregation of TDD's takes place through p
arallel-consecutive reactions where both mobile oxygen dimers and fast migr
ating chainlike TDD's capture interstitial oxygen atoms.