Aggregation kinetics of thermal double donors in silicon

Citation
Yj. Lee et al., Aggregation kinetics of thermal double donors in silicon, PHYS REV L, 86(14), 2001, pp. 3060-3063
Citations number
24
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
14
Year of publication
2001
Pages
3060 - 3063
Database
ISI
SICI code
0031-9007(20010402)86:14<3060:AKOTDD>2.0.ZU;2-U
Abstract
A general kinetic model based on accurate density-functional-theoretic tota l-energy calculations is introduced to describe the aggregation kinetics of oxygen-related thermal double donors (TDD's) in silicon. The calculated ki netics, which incorporates the reactions of associations, dissociations, an d isomerizations of all relevant oxygen complexes, is in agreement with exp erimental annealing studies. The aggregation of TDD's takes place through p arallel-consecutive reactions where both mobile oxygen dimers and fast migr ating chainlike TDD's capture interstitial oxygen atoms.