Emission from hot charge carriers during the formation of high-field autosolitons in electron-hole plasma in n-Ge

Citation
Mn. Vinoslavskii et Av. Kravchenko, Emission from hot charge carriers during the formation of high-field autosolitons in electron-hole plasma in n-Ge, SEMICONDUCT, 35(4), 2001, pp. 377-383
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
4
Year of publication
2001
Pages
377 - 383
Database
ISI
SICI code
1063-7826(2001)35:4<377:EFHCCD>2.0.ZU;2-D
Abstract
The evolution of the spatial distribution of photogenerated electron-hole p lasma in n-Ge samples during charge-carrier heating by an electric field at T = 77 K was studied. A multiprobe system was used, and the infrared emiss ion from the sample in the wavelength range of lambda = 1.65-10 mum was mea sured to clarify the processes of contact exclusion, direction reversal in the bipolar plasma drift, the formation of high-field thermal-diffusion aut osolitons, and lattice heating in the vicinity of an autosoliton. (C) 2001 MAIK "Nauka/Interperiodica".