Gb. Galiev et al., The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy, SEMICONDUCT, 35(4), 2001, pp. 415-418
Epilayers of the n- and p-type were grown. It is demonstrated that the surf
ace relief of the p-type layers is inferior to that of n-type layers. Howev
er, in both cases, the photoluminescence spectra and charge carrier mobilit
y have no considerable distinctions from these characteristics for single-c
rystal samples. Planar p-n junctions were obtained, and diodes were fabrica
ted as well. Depending on the layer structure, the current-voltage characte
ristics for devices take a form typical of conventional or inverted diodes.
(C) 2001 MAIK "Nauka/Interperiodica".