The use of the amphoteric nature of impurity silicon atoms for obtaining planar p-n junctions on GaAs (111)A substrates by molecular beam epitaxy

Epilayers of the n- and p-type were grown. It is demonstrated that the surf ace relief of the p-type layers is inferior to that of n-type layers. Howev er, in both cases, the photoluminescence spectra and charge carrier mobilit y have no considerable distinctions from these characteristics for single-c rystal samples. Planar p-n junctions were obtained, and diodes were fabrica ted as well. Depending on the layer structure, the current-voltage characte ristics for devices take a form typical of conventional or inverted diodes. (C) 2001 MAIK "Nauka/Interperiodica".