Structural, luminescent, and transport properties of hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures grown by molecular beam epitaxy

The fabrication of new hybrid AlAsSb/InAs/Cd(Mg)Se heterostructures by mole cular beam epitaxy and investigation of their structural, luminescent, and transport properties are reported for the first time. These structures show intense luminescence both in the infrared and in the visible regions of th e spectrum. This factor, taken together with structural data, indicates a h eterointerface of high quality between the III-V and II-VI layers. A theore tical estimate is made of the relative positions of energy bands in the pro posed hybrid structures, indicating that the InAs/CdSe interface is a type- II heterojunction, whereas the InAs/Cd0.85Mg0.15Se interface is a type-I he terojunction with a large valence band offset DeltaE(v) approximate to 1.6 eV. The data obtained on the longitudinal electron transport at the InAs/Cd (Mg)Se heterointerface are in good agreement with the theoretical estimate. (C) 2001 MAIK "Nauka/Interperiodica".