Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure

Authors
Ivanov, YL Elizarov, IV Ustinov, VM Zhukov, AE
Citation
Yl. Ivanov et al., Hot-hole lateral transport in a two-dimensional GaAs/Al0.3Ga0.7As structure, SEMICONDUCT, 35(4), 2001, pp. 433-435
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
4
Year of publication
2001
Pages
433 - 435
Database
ISI
SICI code
1063-7826(2001)35:4<433:HLTIAT>2.0.ZU;2-5
Abstract
A narrow peak at the leading edge of the current pulse was found in samples of p-GaAs/Al0.3Ga0.7As structures subjected to a high electric field. An a nalysis of the shape and height of the peak as a function of the electric f ield, as well as the field redistribution along the sample, allows us to co nclude that domain instability exists under these conditions. It is also sh own that the energy of holes heated in moderate electric fields can signifi cantly exceed the optical phonon energy. (C) 2001 MAIK "Nauka/Interperiodic a".