Magnetic-field-induced transitions between minibands in GaAs/AlxGa1-xAs superlattices

Authors
Sapega, VF Mirlin, DN Ruf, T Cardona, M Winter, W Eberl, K
Citation
Vf. Sapega et al., Magnetic-field-induced transitions between minibands in GaAs/AlxGa1-xAs superlattices, SEMICONDUCT, 35(4), 2001, pp. 447-450
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
35
Issue
4
Year of publication
2001
Pages
447 - 450
Database
ISI
SICI code
1063-7826(2001)35:4<447:MTBMIG>2.0.ZU;2-6
Abstract
The transition from closed to open electron orbits in a magnetic field has been studied by polarized hot electron photoluminescence (HEPL) in superlat tices with varied widths of electron minibands. The dependence of the HEPL depolarization on the miniband width is observed. The strong depolarization occurring when the kinetic energy of electrons exceeds the energy gap betw een the minibands is interpreted in terms of a magnetic-field-induced trans ition between the electron minibands (magnetic breakdown). (C) 2001 MAIK "N auka/Interperiodica".