Radiation hardness of SiC ion detectors under relativistic protons

Schottky diodes based on 6H-SiC epitaxial films exposed to 1000 MeV protons at a dose of 3 x 10(14) cm(-2) have been studied by precision alpha spectr ometry. Parameters of deep levels introduced by protons were determined by deep-level transient spectroscopy. The number of vacancies generated in pro ton tracks was found using TRIM software. The width of the space charge reg ion and the hole diffusion length before and after irradiation were obtaine d by processing the alpha-spectrometry and capacitance measurements. Minor variations in the charge transport properties of epitaxial 6H-SiC detectors were observed. (C) 2001 MAIK "Nauka/ Interperiodica".